Silicon PIN photodiodes

We produce PIN photodiodes on n-type and p-type substrate, standard and quadrant, with active areas from 0.8 mm² to 80 mm² (other sizes on request).

n-type Photodiodes

Our n-type silicon PIN photodiodes are optimized for detection of radiation at 900 nm. A photodiode illuminated by visible and near infrared light behaves as a current source with photocurrent proportional to the power of detected radiation. Reverse bias increases parallel internal resistance and decreases capacity of diode. Decrease of capacity and of load resistance RL decreases response time. Low capacity with relatively low bias is achieved by using extremely pure, high resistance silicon for the base I-region of the diode (> 2 kΩcm). Background radiation flux increases noise current, thus filters or darkening are recommanded to decrease this radiation.

		FD08N	FD5N FD5N1	FD80N
Type		N	N	N
Active area (mm2)		0.8	5	80
Housing		TO-18	TO-5	TO-25
Supply voltage (V)		45	45	45
Breakdown voltage (V)		100	100	100
Dark current (nA)	typical	2	20	50
	max	20	50	300
Responsivity (A/W)	900 nm typical	0.60	0.60	0.60
	900 nm min.	0.50	0.50	0.50
	1060 nm typical	0.15	0.15	0.15
	1060 nm min.	0.10	0.10	0.10
NEP (10-12Hz1/2)	900 nm typical	<1	<1.5	5
	900 nm max	5	7	20
	1060 nm typical	<4	<4	20
	1060 nm max.	20	20	80
Capacity (pF)	typical	2.5	8	70
	max	3	10	120
Response (ns)	900 nm	31)	51)	101)

¹⁾ at 50% of amplitude

 

Download pdf versions of data sheets for our n-type diodes:

n-type Si PIN diode, active area 0.8 mm²
n-type Si PIN diode, active area 5 mm^2, standard height or with a low-cap housing
n-type Si PIN diode, active area 80 mm²

 

p-type Photodiodes

Our p-type silicon PIN photodiodes are optimized for detection of radiation at 1060 nm. A photodiode illuminated by visible and near infrared light behaves as a current source with photocurrent proportional to the power of detected radiation. Reverse bias increases parallel internal resistance and capacity of diode. Decrease of capacity and of load resistance RL decreases response time. Low capacity with relatively low bias is achieved by using extremely pure, high resistance silicon for the base I-region of the diode (> 10 kΩcm). Background radiation flux increases noise current, thus filters or darkening are recommanded to decrease this radiation. Influences of transition area width and cross-talk influence are minimized for our quadrant-type PIN diodes.

 

		FD5P FD5P1	QDY7P 3)	QDY80P 3)
Type		P	P	P
Active area (mm2)		5	7	80
Housing		TO-5	TO-5, 8	TO-25
Supply voltage (V)		200	200	200
Breakdown voltage (V)		250	250	250
Dark current (nA)	Typical	20	10	100
	max	100	50	1000
Responsivity (A/W)	900 nm typical	0.60	0.60	0.60
	900 nm min.	0.50	0.50	0.50
	1060 nm typical	0.45	0.45	0.45
	1060 nm min.	0.40	0.40	0.40
NEP (10-12Hz1/2)	900 nm typical	<1.5	<1.5	5
	900 nm max	10	7	40
	1060 nm typical	<2.5	<2.5	7
	1060 nm max.	15	12	60
Capacity (pF)	typical	2.5	1.2	7
	max	3	1.4	10
Response (ns)	1060 nm	<112)	<112)	<202)

2) 10% - 90% of amplitude
3) per quadrant

 

Download pdf versions of data sheets for our p-type diodes:

p-type Si PIN diode, active area 5 mm^2, standard height or with a low-cap housing
quadrant p -type Si PIN diode, active area 7 mm²
quadrant p -type Si PIN diode, active area 80 mm²